STD/SDT181
Thyristor-Diode Modules, Diode-Thyristor Modules
Dimensions in mm (1mm=0.0394")
Type
V
RSM
V
DSM
V
STD/SDT181GK08
900
STD/SDT181GK12
1300
STD/SDT181GK14
1500
STD/SDT181GK16
1700
STD/SDT181GK18
1900
V
RRM
V
DRM
V
800
1200
1400
1600
1800
Symbol
I
TRMS
, I
FRMS
T
VJ
=T
VJM
I
TAVM
, I
FAVM
T
C
=85
o
C; 180
o
sine
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=T
VJM
f=50Hz, t
p
=200us
V
D
=2/3V
DRM
I
G
=0.5A
di
G
/dt=0.5A/us
Test Conditions
Maximum Ratings
300
181
Unit
A
I
TSM
, I
FSM
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
repetitive, I
T
=500A
6000
6400
5250
5600
180000
170000
137000
128000
150
A
i
2
dt
A
2
s
(di/dt)
cr
A/us
non repetitive, I
T
=500A
500
1000
120
60
8
10
-40...+125
125
-40...+125
V/us
W
W
V
o
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
T
VJ
=T
VJM
;
V
DR
=2/3V
DRM
R
GK
= ; method 1 (linear voltage rise)
T
VJ
=T
VJM
I
T
=I
TAVM
t
p
=30us
t
p
=500us
C
50/60Hz, RMS
_
I
ISOL
<1mA
t=1min
t=1s
3000
3600
2.25-2.75/20-25
4.5-5.5/40-48
125
V~
Nm/lb.in.
g
Mounting torque (M6)
Terminal connection torque (M6)
Typical including screws
STD/SDT181
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
10
1.25
0.88
1.15
V
D
=6V;
V
D
=6V;
T
VJ
=T
VJM
;
T
VJ
=25
o
C
T
VJ
=-40
o
C
T
VJ
=25
o
C
T
VJ
=-40
o
C
V
D
=2/3V
DRM
2.5
2.6
150
200
0.2
10
T
VJ
=25
o
C; t
p
=30us; V
D
=6V
I
G
=0.5A; di
G
/dt=0.5A/us
T
VJ
=25
o
C; V
D
=6V; R
GK
=
T
VJ
=25
o
C; V
D
=1/2V
DRM
I
G
=0.5A; di
G
/dt=0.5A/us
T
VJ
=T
VJM
; I
T
=300A; t
p
=200us; -di/dt=10A/us
V
R
=100V; dv/dt=20V/us; V
D
=2/3V
DRM
T
VJ
=T
VJM
; I
T
, I
F
=300A; -di/dt=50A/us
typ.
300
200
2
150
550
235
per thyristor/diode; DC current
per module
per thyristor/diode; DC current
per module
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
0.155
0.0775
0.225
0.1125
12.7
9.6
50
Unit
mA
V
V
m
V
mA
V
mA
mA
mA
us
us
uC
A
K/W
K/W
mm
mm
m/s
2
I
RRM
, I
DRM
T
VJ
=T
VJM
; V
R
=V
RRM
; V
D
=V
DRM
V
T
, V
F
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
I
T
, I
F
=300A; T
VJ
=25
o
C
For power-loss calculations only (T
VJ
=125
o
C)
FEATURES
* International standard package
* Copper base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
STD/SDT181
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 2 i
2
t versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 4 Gate trigger characteristics
3 x STD/SDT181
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time
STD/SDT181
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
3 x STD/SDT181
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
R
thJC
for various conduction angles d:
d
DC
180
o
C
120
o
C
60
o
C
30
o
C
R
thJC
(K/W)
0.155
0.167
0.176
0.197
0.227
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.0072
0.0188
0.129
t
i
(s)
0.001
0.08
0.2
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
R
thJK
for various conduction angles d:
d
DC
180
o
C
120
o
C
60
o
C
30
o
C
R
thJK
(K/W)
0.225
0.237
0.246
0.267
0.297
Constants for Z
thJK
calculation:
i
1
2
3
4
R
thi
(K/W)
0.0072
0.0188
0.129
0.07
t
i
(s)
0.001
0.08
0.2
1.0
